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    Nika 2013-500 series machines

    Small-size versatile machines for industrial applications. Two modifications: CLD-C(Conductive Layer Deposition on Cooled substrates) and ME/ME-CVD (Magnetron Enhanced Chemical Vapor Deposition). All machine components are configured inside a single dustproof framed enclosure.

    The machine is factory-assembled (transported on a pallet truck). Commissioning work is reduced to connecting water, compressed air, process gases and electric power.

    High vacuum is generated by a completely oil-free pumping system based on a cryogenic or turbomolecular pump. Forevacuum is provided by a scroll pump.

    Vacuum chamber is designed as a horizontal cylinder 500 mm in diameter and 500 mm in length, equipped with a cooling jacket.

    Vacuum system control unit controls and monitors all systems of the machine in automatic mode.

    The flow of coolant is distributed and monitored by the water distribution unit.

    Operator controls the machine via a computer, which displays the status of all machine systems, performs backup and logging of parameters, executes process formulations and enables remote control via the Internet.

    Nika-2013-500 СLD-С (Conductive Layer Deposition on Cooled substrates) machine is designed for deposition of multi-layer coatings on cooled substrates. Deposition takes place sequentially by three round magnetrons with the target diameter of 100 mm. To enable preliminary target cleaning, each magnetron is equipped with an individually controlled shutter. Preliminary cleaning of substrates is performed by an ion source. Substrates are installed in a water-cooled holder with gas heat removal. Substrates can be processed both in continuous rotation and intermittent mode. The ion source can also be used for substrates etching.

    Nika-2013-500 ME/ME-CVD (Magnetron Enhanced Chemical Vapor Deposition) machine is designed for ion-plasma and plasmachemical etching of a variety of conductive and dielectric layers. Etching takes place in plasma of a cross-field gas discharge. The discharge is ignited on a flat water-cooled electrode positioned in a magnetic field. The magnetic field is generated by a special-purposemagnetic system. Substrates are placed into special cassette carriers. To enable treatment of dielectric and semiconductive substrates, a high frequency current is supplied from the generator to the electrode via an automatic matching network. Discharge power value can be set within a broad range. By controlling magnetic field strength, the energy of ions that bombard the substrate can be changed. Plasmachemical etching of organic layers takes place in oxygen plasma with a low automatic bias. For etching metallic layers, the automatic bias is increased to 200-300 V.


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