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    Nika-2012 PS Conductive Layers Deposition Machine (CLD)

    A plant for thick metal coating deposition through magnetron sputtering.

    Purpose: deposition of thick metal coatings on ceramic substrates by thermal evaporation in magnetron discharge. Metal (Cr, Ti, Ta) or dielectric underlayer may be deposited to ensure conductive layer adhesion. In the latter case, resistive losses in microwave circuits are minimized.

    Processes:

    • ion-beam cleaning of substrates;

    • magnetron sputtering of metal targets;

    • magnetron sputtering of magnetic materials (nickel);

    • thermal evaporation in magnetron discharge with a high speed of deposition (up to 1 µm/min on a rotating carrousel, up 60 µm full thickness for the whole batch);

    • dielectric underlayer deposition (optional);

    • optional reduction treatment in hydrogen plasma instead of high-temperature annealing and etching of organic materials.

    Configuration:

    • ion source or a plasma generator;

    • magnetron for metallic (Cr, Ti, Ta) or dielectric underlayer deposition;

    • magnetron for thick metal coating deposition (Cu, AG) by thermal evaporation in magnetron discharge;

    • magnetron for deposition of a protective Ni layer;

    • carrousel for single- or double-side deposition with an option for rapid switching of operation mode;

    • two plasma-forming gas supply ducts;

    • heater (optional).

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