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    Nika-2012 RS Resistive Layers Deposition Machine (RL)

    Nika-2012 RS Resistive Layers Deposition Machine

    Purpose: deposition of resistive layers, ion-plasma cleaning and etching, plasmachemical ("dry") removal of photoresist.

    Processes:

    • magnetron sputtering of metal and silicide targets;
    • ion-beam cleaning and etching of layers;
    • dry photoresist removal;
    • depositing protective dielectric coatings above the resistive layer;
    • depositing/etching to a preset thickness with resistance control.

    Configuration:

    • carrousel for 12 60x48 rectangular substrates or 6 round substrates, Ø100, for single-side deposition;
    • magnetron for underlayer deposition;
    • one or two magnetrons for resistive layer deposition (from metal or silicide targets);
    • ion source for activation of substrates and etching of layers;
    • radio-frequency plasma generator for substrates activation and photoresist removal;
    • heater with a preset temperature maintenance function.
    • 3 – 4 plasma-forming gas supply ducts.

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