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    Nika-2012 IN Ion-Beam Sputtering Machine (IBS)

    Nika2012_IBD Nika2012_IBD

    Nika-2012 IN Ion-Beam Sputtering Machine (IBS)

    An ion beam deposition system for controlled deposition of multilayer coatings from six conductive or dielectric targets in arbitrary order with high-density plasma assisting the deposition process (IPVD). The ion beam sputtering can be performed by ions of an inert gas and in a chemically reactive gas plasma.

    Purpose: deposition of films with arbitrary composition (metals, dielectric, semiconductors) on substrates with diameters up to 100 mm, with coating thickness control using a quartz gauge. An unlimited number of layers are deposited automatically from six different targets in a programmable sequence. A sluice-type plant with individual loading of substrates. Substrates are placed in vertical plane on heated holders rotating at variable speed around a longitudinal axis. The plants may be equipped with cooled or heated turntables with helium heat removal. Midfrequency bias can be fed to conductive targets in order to increase evaporation speed.

    Processes:

    • ion-beam sputtering of conductive and dielectric targets;
    • cathode sputtering of conductive targets;
    • reactive deposition of dielectrics, ion deposition.

    Configuration:

    • transfer chamber for rapid substrate reloading;
    • heated or cooled rotating substrate holders;
    • Ion Source II-52 ion source for sputtering targets;
    • RFPG-128 plasma generator for substrates cleaning, cathode sputtering and ion assistance;
    • 6-piece rotating cooled target holder;
    • up to 4 plasma-forming gas supply ducts.

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