Nika-2012

    Nika-2012 Series: a modern version of UVN-71 series hood-type machines. Stainless steel chamber Ø400х350 or Ø500х400 mm with a cooling jacket. Integrated rack-free version. Oil-free pumping (turbomolecular or cryogenic pump). Area, including service zone – 3 m2, plan view area– 2 m2.

    Mobile bottom flange: 4 ISO63 mounting positions for devices to choose from: magnetrons, ion source, plasma generator, thermal evaporators. Flat carrousel for single-side treatment (6 round substrates Ø100 mm or 12 rectangular substrates 60 x 48 mm), or a substrates overturning system for double-side treatment. Quick carrousel replacement for different substrates. Automatic shutter control.

    Top flange – optional heater and quartz coating thickness gauge can be installed. 5 x ISO63 openings.

    3 viewports equipped with shutters. An ISO160 flange with accessory equipment may be installed instead of each viewport.

    Power supply: 380 V, 50 Hz, 8 to 15 kW.

    Dimensions: 850..415 х 900..1100 х 1750..1900.

    Weight: 300 to 400 kg.

    Nika-2012 series includes the following basic configurations for typical purposes: sputtering machines Ion-Beam Sputtering, Resistive Layers Deposition, Conductive Layers Deposition, Thermal Sputtering and plasma-enhanced chemical deposition machine Magnetron Deposition/Etching.


    Nika-2012 IN Ion-Beam Sputtering Machine (IBS) An ion beam deposition system for controlled deposition of multilayer coatings from six conductive or dielectric targets in arbitrary order with high-density plasma assisting the deposition process (IPVD). The ion beam sputtering can be performed by ions of an inert gas and in a chemically reactive gas plasma. Purpose: deposition of films with arbitrary composition (metals, dielectric, semiconductors) on substrates with diameters up to 100 mm, with coating thickness control using a quartz gauge. An…
    Purpose: PVD of materials with preliminary ion-beam cleaning and magnetron deposition of an underlayer. Processes: ion-beam cleaning of substrates, including low-energy one (ion energy up to 40 eV); magnetron sputtering of an adhesive underlayer (Cr, Ta, Ti); reduction treatment in hydrogen plasma; dry removal of photoresist by oxygen or hydrogen plasma etching; deposited layer thickness monitoring by resistance, a quartz thickness gauge or by time; PVD of conductive and resistive layers by thermal evaporation. Configuration: ion source for substrate cleaning…
    Nika-2012 RS Resistive Layers Deposition Machine Purpose: deposition of resistive layers, ion-plasma cleaning and etching, plasmachemical ("dry") removal of photoresist. Processes: magnetron sputtering of metal and silicide targets; ion-beam cleaning and etching of layers; dry photoresist removal; depositing protective dielectric coatings above the resistive layer; depositing/etching to a preset thickness with resistance control. Configuration: carrousel for 12 60x48 rectangular substrates or 6 round substrates, Ø100, for single-side deposition; magnetron for underlayer deposition; one or two magnetrons for resistive layer deposition…
    A plant for thick metal coating deposition through magnetron sputtering. Purpose: deposition of thick metal coatings on ceramic substrates by thermal evaporation in magnetron discharge. Metal (Cr, Ti, Ta) or dielectric underlayer may be deposited to ensure conductive layer adhesion. In the latter case, resistive losses in microwave circuits are minimized. Processes: ion-beam cleaning of substrates; magnetron sputtering of metal targets; magnetron sputtering of magnetic materials (nickel); thermal evaporation in magnetron discharge with a high speed of deposition (up to…
    A plant for ion and plasmachemical treatment of substrates in high-density plasma medium. Purpose: Substrates are placed on both sides of a flat water-cooled electrode with a helium heat removal. A high-frequency magnetron discharge with a highly uniform ion current density is ignited around it. Discharge in inert or chemically active gas medium. The treatment zone dimensions at each side are 200 x 200 mm. Substrate size: 25 to 200 mm. Processes: plasma-enhanced chemical vapor deposition (PECVD) of dielectric layers…
    Vacuum machine Nika-2012-500 MS Magnetron Sputtering is a full functional analogue of soviet vacuum macine UVN-71. This macine differs from other installations of NIKA-series enlarged cylindrical chamber 500x400 mm. System is designed for magnetron and thermal sputtering, ion etching, plasma-chemical processes. Depending on task Machine NIKA-2012-500 can be equipped with 4 process units (magnetron system, thermal evaporator, ion-beam source, plasma generator). There is a dry pumping system through cryogenic or turbomolecular pump. The basic technical characteristics: 380V, 50 Hz, 24…