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    IBS-52 Circular Ion Beam Source

    High density of ion flux in the beam and its small cross dimensions allow to use small-size targets.

    Purpose: sputtering of materials from dielectric, semiconductor, magnetic and non-magnetic metal targets.

    Processes:

    • deposition of metals and dielectrics by ion sputtering.

    Installation: on a sliding seal, on a Du5 bellows lead.

    Voltage, kV

    2.5..5

    Beam shape

    Circular, tubular

    Beam diameter, mm

    20

    Housing diameter, mm

    52

    Housing length, mm

    80

    Maximum beam current, mA*

    160

    Gas efficiency, mA/sccm*

    6

    Beam angle, maximum, º

    2

    Operating pressure range in the chamber, Pa

    0.001..10

    Maximum life of electrodes, hours

    30

    Weight (kg)

    0.3

    *plasma-forming gas at 5 kV supply voltage: Ar


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